Physical properties of semiconductor nanostructures: First principles studies

F. Sánchez-Ochoa 1 , J. M. Galicia-Hernández 1 , J. Guerrero-Sánchez 2 , Gregorio H.

Cocoletzi 1, Noboru Takeuchi 2 , A. Sánchez-Castillo 3

1 BUAP, Instituto de Física “Ing. Luis Rivera Terrazas”

2 UNAM, Centro de Nanociencias y Nanotecnología

3 UAEH, Escuela Superior de Apan

 

Physical properties of semiconductor surfaces and nanostructures are of current interest in the material sciences because of the multiple technological applications. The nanostructures include 2D layers, 1D nanowires and nanotubes, and nanoparticles which have been extensively investigated both experimental and theoretically. Graphene and 2D boron nitride layers (a graphene-like system) may be considered as good examples of low dimensional systems with applications in the nano-optoelectronic industry. A great variety of devices include as part of them the graphene layer, namely; vertical field effect transistors, gas sensors, and organic light-emitting diodes (OLEDs). In this presentation we will describe some first principles total energy studies of semiconductor surfaces and nanostructures. Examples of semiconductor low dimensional systems will be considered to describe calculations of structural, electronic, optical and transport properties.