R. López-Sandoval
Instituto Potosino de Investigación Científica y Tecnológica, San Luis Potosí, SLP, México
In this work, we talk about non-volatile memory devices based on resistive switching mechanism. A resistive switching memory is generally built by a capacitor like metal-insulator or semiconductor-metal (MIM) structure. In particular, we focus in organic resistive memory where the insulator layer is a multiwalled-carbon-nanotubes/PEDOT: PSS nanocomposite. We show that an essential parameter on the properties of memory devices is the metals used as electrodes. In general, in our memory device for having the resistive switching is necessary that one of the electrodes is an electrode of Al. This is because the aluminum always presents a native oxide layer, which can be electroformed to have resistive switching. In addition, physical and chemical properties of this native Al oxide layer can be modified using UV ozone treatment, which has important consequences on the resistive switching properties. Finally, it is essential that the carbon nanotubes are embedded in the PEDOT: PSS polymer matrix in order that our devices show a significant number of write-read-erase-read cycles. Moreover, depending on the type of carbon nanotube used in the memory device, i.e. doped with nitrogen, or functionalized with O groups, or pristine, the electrical properties of the memories are different.